Organic light-emitting diode display

ABSTRACT

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate and an active pattern formed over the substrate and including first to fourth regions. A gate insulation layer is formed over the active pattern and the substrate, and a first gate electrode is formed over the gate insulation layer and partially overlapping the active pattern. The first gate electrode, the first region and the second region define a first transistor. A second gate electrode is formed on the same layer as the first gate electrode. The second gate electrode, the third region and the fourth region define a second transistor, and the second gate electrode, the second region and the fourth region define a third transistor. A first insulating interlayer is formed over the first gate electrode, the second gate electrode, and the gate insulation layer.

INCORPORATION BY REFERENCE TO ANY PRIORITY APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/869,591, filed Sep. 29, 2015, which claims priority under 35 USC §119to Korean Patent Applications No. 10-2015-0028724, filed on Feb. 28,2015 in the Korean Intellectual Property Office (KIPO), the disclosuresof which are incorporated by reference herein in their entireties.

BACKGROUND

Field

The described technology generally relates to an organic light-emittingdiode display.

Description of the Related Technology

A display device generates an image using a matrix of pixels emittinglight. An organic light-emitting diode (OLED) display emits light thathas a wavelength that depends on the organic material of the OLED. Forexample, the OLED can include organic material corresponding to one of ared color light, a green color light, and a blue color light.

The OLED display can be driven with an analog or a digital drivingmethod. While the analog driving method produces grayscale usingvariable voltage levels corresponding to input data, the digital drivingmethod produces grayscale using variable time duration in which the OLEDemits light. In the analog driving method, as a voltage level of a dataline changes, crosstalk can occur in lines that are adjacent to the dataline.

SUMMARY OF CERTAIN INVENTIVE ASPECTS

One inventive aspect relates to an OLED display having improveddefinition.

Another aspect is an OLED display that includes a substrate, an activepattern, a gate insulation layer, a first gate electrode, a second gateelectrode, a first insulating interlayer, a first conductive pattern, afirst power supply voltage line, a first electrode, an organic lightemitting layer, and a second electrode. The active pattern is formed onthe substrate, and includes a first region, a second region, a thirdregion, and a fourth region. The gate insulation layer is formed on theactive pattern and the substrate. The first gate electrode is formed onthe gate insulation layer, and partially overlaps the active pattern.The first gate electrode defines a first transistor together with thefirst region and the second region. The second gate electrode is formedat the same level with the first gate electrode, and defines a secondtransistor together with the third region and the fourth region. Thesecond gate electrode defines a third transistor together with thesecond region and the fourth region. The first insulating interlayer isformed on the first gate electrode, the second gate electrode, and thegate insulation layer. The first conductive pattern is formed on thefirst insulating interlayer, and overlaps at least a portion the thirdand fourth regions. The first conductive pattern defines a parasiticcapacitor together with the at least a portion the third and fourthregions with which the first conductive pattern is overlapped. The firstpower supply voltage line is formed on the first conductive pattern, andreceives a first power supply voltage. The first electrode is formed onthe first power supply voltage line, and is electrically connected tothe first through third transistors. The organic light emitting layer isformed on the first electrode. The second electrode is formed on theorganic light emitting layer.

In example embodiments, the second gate electrode includes a second gateextended portion and a second gate protruding portion. The second gateextended portion can extend in a first direction that is in paralleledto an upper surface of the substrate. The second gate protruding portioncan be protruded from the second gate extended portion in a seconddirection that is perpendicular to the first direction.

In example embodiments, a first portion of the second gate extendedportion serves as a gate electrode of the third transistor, and thesecond gate protruding portion serves as a gate electrode of the secondtransistor.

In example embodiments, the active pattern further includes a fifthregion. The second gate electrode can define a fourth transistortogether with the first region and the fifth region. The second portionthat is opposite to the first portion of the second gate extendedportion can serve as a gate electrode of the fourth transistor.

In example embodiments, the OLED display further includes a data line.The data line can be formed at the same level with the first powersupply voltage line, and can receive a data signal. The data line canprovide the data signal to the fifth region via a first contact hole.The first conductive pattern can be interposed between the data line andthe third and fourth regions of the active pattern such that the firstconductive pattern shields a parasitic capacitor between the data lineand the third and fourth regions of the active pattern.

In example embodiments, the OLED display further includes a secondconductive pattern. The second conductive pattern can be formed at thesame level with the first conductive pattern, and can partially overlapthe first gate electrode and the first and second regions of the activepattern. The second conductive pattern can have an opening that exposesat least a portion the first gate electrode, and can define a storagecapacitor together with the first gate electrode.

In example embodiments, the first and second conductive patterns do notoverlap with the second gate electrode.

In example embodiments, the second conductive pattern and the firstconductive pattern are simultaneously formed using the same materials.

In example embodiments, the active pattern further includes a sixthregion, a seventh region, an eighth region, a ninth region, and a tenthregion.

In example embodiments, the OLED display further includes a third gateelectrode and a fourth gate electrode. The third gate electrode can beformed on the gate insulation layer, and can define a fifth transistortogether with the third region and the sixth region. The third gateelectrode can define a sixth transistor together with the sixth regionand the seventh region, and can define a seventh transistor togetherwith the seventh region and the eighth region. The fourth gate electrodecan be formed at the same level with the third gate electrode, and candefine an eighth transistor together with the second region and theninth region. The fourth gate electrode can define a ninth transistortogether with the first region and the tenth region.

In example embodiments, the OLED display further includes a second powersupply voltage line. The second power supply voltage line can be formedat the same level with the first and second conductive patterns, and canreceive a second power supply voltage.

In example embodiments, the second power supply voltage line includes asecond power supply extended portion and a second power supplyprotruding portion. The second power supply extended portion can extendin a first direction that is in paralleled to an upper surface of thesubstrate. The second power supply protruding portion can be protrudedfrom the second power supply extended portion in a second direction thatis perpendicular to the first direction.

In example embodiments, the second power supply protruding portionoverlaps a portion of the third gate electrode.

In example embodiments, the OLED display further includes a firstconnection pattern and a second connection pattern. The first connectionpattern can be electrically connected to the second power supplyprotruding portion and the seventh region via a second contact hole anda third contact hole. The second connection pattern can be electricallyconnected to the third region and the first gate electrode via a fourthcontact hole and a fifth contact hole.

In example embodiments, the first power supply voltage line can providethe first power supply voltage to the tenth region via a six contacthole, and can provide the first power supply voltage to the secondconductive pattern via a seventh contact hole. The first power supplyvoltage line can provide the first power supply voltage to the firstconductive pattern via an eighth contact hole.

In example embodiments, the OLED display can further include a thirdconnection pattern. The third connection pattern can be electricallyconnected to the ninth region and the first electrode via a ninthcontact hole.

In example embodiments, the OLED display can further include a secondinsulating interlayer and a third insulating interlayer. The secondinsulating interlayer can be formed on the first conductive pattern andthe first insulating interlayer. The third insulating interlayer can beformed on the first power supply voltage line and the second insulatinginterlayer.

In example embodiments, the second gate electrode can receive a scansignal. The third gate electrode can receive an initialization signal.The fourth gate electrode can receive a light emitting signal.

In example embodiments, the OLED display can further include a firstconnection pattern. The first connection pattern can be electricallyconnected to the first conductive pattern and the seventh region via asecond contact hole and a third contact hole. The first conductivepattern can receive a second power supply voltage.

In example embodiments, the first power supply voltage line can providethe first power supply voltage to the tenth region via a sixth contacthole, and can provide the first power supply voltage to the secondconductive pattern via a seventh contact hole.

Another aspect is an organic light-emitting diode (OLED) display,comprising: a substrate; an active pattern formed over the substrate andincluding a first region, a second region, a third region, and a fourthregion; a gate insulation layer formed over the active pattern and thesubstrate; a first gate electrode formed over the gate insulation layerand partially overlapping the active pattern, wherein the first gateelectrode, the first region and the second region define a firsttransistor; a second gate electrode formed on the same layer as thefirst gate electrode, wherein the second gate electrode, the thirdregion and the fourth region define a second transistor, and wherein thesecond gate electrode, the second region and the fourth region define athird transistor; a first insulating interlayer formed over the firstgate electrode, the second gate electrode, and the gate insulationlayer; a first conductive pattern formed over the first insulatinginterlayer and overlapping at least a portion of the third and fourthregions, wherein the first conductive pattern and the overlappingportions of the third and fourth regions define a parasitic capacitor; afirst power supply voltage line formed over the first conductive patternand configured to receive a first power supply voltage; a firstlight-emitting electrode formed over the first power supply voltage lineand electrically connected to the first to third transistors; an organiclight-emitting layer formed over the first light-emitting electrode; anda second light-emitting electrode formed over the organic light-emittinglayer.

In the above OLED display, the second gate electrode includes: a secondgate extended portion extending in a first direction that is parallel toan upper surface of the substrate; and a second gate protruding portionprotruding from the second gate extended portion in a second directioncrossing the first direction.

In the above OLED display, the second gate extended portion includes afirst portion formed on a first side of the second gate extendedportion, wherein the first portion of the second gate extended portionincludes a gate electrode of the third transistor, and wherein thesecond gate protruding portion includes a gate electrode of the secondtransistor.

In the above OLED display, the active pattern further includes a fifthregion, wherein the second gate electrode, the first region and thefifth region define a fourth transistor, wherein the second gateextended portion includes a second portion formed on a second sideopposing the first side of the second gate extended portion, and whereinthe second portion of the second gate extended portion includes a gateelectrode of the fourth transistor.

The above OLED display further comprises: a data line formed on the samelayer as the first power supply voltage line, wherein the data line isconfigured to receive a data signal and provide the data signal to thefifth region via a first contact hole, and wherein the first conductivepattern is interposed between the data line and the third and fourthregions of the active pattern such that the parasitic capacitor iselectrically disconnected from the data line.

The above OLED display further comprises: a second conductive patternformed on the same layer as the first conductive pattern and partiallyoverlapping the first gate electrode and the first and second regions ofthe active pattern, wherein the second conductive pattern has an openingthat exposes at least a portion of the first gate electrode, and whereinthe second conductive pattern and the first gate electrode define astorage capacitor.

In the above OLED display, the first and second conductive patterns donot overlap the second gate electrode.

In the above OLED display, the first and second conductive patterns areformed of the same material.

In the above OLED display, the active pattern further includes a sixthregion, a seventh region, an eighth region, a ninth region, and a tenthregion.

The above OLED display further comprises: a third gate electrode formedover the gate insulation layer, wherein the third gate electrode, thethird region and the sixth region define a fifth transistor, wherein thethird gate electrode, the sixth region and the seventh region define asixth transistor, and wherein the third gate electrode, the seventhregion and the eighth region define a seventh transistor; and a fourthgate electrode formed on the same layer as the third gate electrode,wherein the fourth gate electrode, the second region and the ninthregion define an eighth transistor, and wherein the fourth gateelectrode, the first region and the tenth region define a ninthtransistor.

The above OLED display further comprises: a second power supply voltageline formed on the same layer as the first and second conductivepatterns, wherein the second power supply voltage line is configured toreceive a second power supply voltage.

In the above OLED display, the second power supply voltage lineincludes: a second power supply extended portion extending in a firstdirection that is parallel to an upper surface of the substrate; and asecond power supply protruding portion protruding from the second powersupply extended portion in a second direction crossing the firstdirection.

In the above OLED display, the second power supply protruding portionoverlaps a portion of the third gate electrode.

The above OLED display further comprises: a first connection patternelectrically connected to the second power supply protruding portion andthe seventh region via a second contact hole and a third contact hole,respectively; and a second connection pattern electrically connected tothe third region and the first gate electrode via a fourth contact holeand a fifth contact hole, respectively.

In the above OLED display, the first power supply voltage line isconfigured to i) provide the first power supply voltage to the tenthregion via a six contact hole and ii) provide the first power supplyvoltage to the second conductive pattern via a seventh contact hole,wherein the first power supply voltage line is configured to provide thefirst power supply voltage to the first conductive pattern via an eighthcontact hole.

The above OLED display further comprises a third connection patternelectrically connected to the ninth region and the first electrode via aninth contact hole.

The above OLED display further comprises: a second insulating interlayerformed over the first conductive pattern and the first insulatinginterlayer; and a third insulating interlayer formed over the firstpower supply voltage line and the second insulating interlayer.

In the above OLED display, the second gate electrode is configured toreceive a scan signal, wherein the third gate electrode is configured toreceive an initialization signal, wherein the fourth gate electrode isconfigured to receive a light emitting signal.

The above OLED display further comprises: a first connection patternelectrically connected to the first conductive pattern and the seventhregion via a second contact hole and a third contact hole, respectively,wherein the first conductive pattern is configured to receive a secondpower supply voltage.

In the above OLED display, the first power supply voltage line isconfigured to i) provide the first power supply voltage to the tenthregion via a sixth contact hole and ii) provide the first power supplyvoltage to the second conductive pattern via a seventh contact hole.

According to at least one of the disclosed embodiments, an OLED displayincludes a parasitic capacitor including a conductive pattern applied toa power supply voltage, a crosstalk that occurs between lines that isadjacent to a data signal line according to a voltage fluctuation of thedata signal can be reduced. Accordingly, definition of the OLED displaycan be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram illustrating a pixel in accordance withexample embodiments.

FIG. 2 is a layout diagram illustrating an OLED display including thepixel in accordance with example embodiments.

FIG. 3 is a layout diagram illustrating an OLED display including thepixel in accordance with example embodiments.

FIG. 4 is a layout diagram illustrating an OLED display including thepixel in accordance with example embodiments.

FIG. 5 is a layout diagram illustrating an OLED display including thepixel in accordance with example embodiments.

FIG. 6 is a layout diagram illustrating an OLED display including thepixel in accordance with example embodiment.

FIG. 7 is a layout diagrams illustrating an OLED display including thepixel in accordance with example embodiment.

FIG. 8 is a layout diagrams illustrating an OLED display including thepixel in accordance with example embodiment.

FIG. 9 is a cross-sectional view taken along a line I-I′ of FIG. 7.

FIG. 10 is a cross-sectional view taken along a line II-II of FIG. 8.

FIG. 11 is a layout diagram illustrating an OLED display including thepixel in accordance with some example embodiments.

FIG. 12 is a layout diagram illustrating an OLED display including thepixel in accordance with some example embodiments.

FIG. 13 is a layout diagram illustrating an OLED display including thepixel in accordance with some example embodiments.

FIG. 14 is a layout diagram illustrating an OLED display including thepixel in accordance with some example embodiments.

DETAILED DESCRIPTION OF CERTAIN INVENTIVE EMBODIMENTS

Hereinafter, embodiments of the described technology will be explainedin detail with reference to the accompanying drawings. In thisdisclosure, the term “substantially” includes the meanings ofcompletely, almost completely or to any significant degree under someapplications and in accordance with those skilled in the art. Moreover,“formed on” can also mean “formed over.” The term “connected” caninclude an electrical connection.

FIG. 1 is a circuit diagram illustrating a pixel in accordance withexample embodiments.

Referring to FIG. 1, a pixel 10 includes an organic light-emitting diode(OLED), a first transistor TR1, a second transistor TR2, a thirdtransistor TR3, a fourth transistor TR4, a fifth transistor TR5, a sixthtransistor TR6, a seventh transistor TR7, an eighth transistor TR8, aninth transistor TR9, a storage capacitor CST, a parasitic capacitor CP1and a parasitic capacitor CP2. A parasitic capacitor is capacitance thatmay exist between different portions of electronic components or acircuit due to their proximity to each other. For example, twoconductors separated by an insulator (e.g., wires) can have a parasiticcapacitor that is unintentionally or undesirably formed which cannegatively affect the performance of the electronic component orcircuit.

The OLED can emit light based on a driving current ID. The OLED caninclude a first terminal and a second terminal. In example embodiments,the second terminal of the OLED receives a third power voltage ELVSS.For example, the first terminal of the OLED is an anode, and the secondterminal of the OLED is a cathode. Alternatively, the first terminal ofthe OLED can be a cathode, and the second terminal of the OLED can be ananode.

The first transistor TR1 can include a gate terminal, a first terminal,and a second terminal. In example embodiments, the first terminal is asource terminal, and the second terminal is a drain terminal.Alternatively, the first terminal can be a drain terminal, and thesecond terminal can be a source terminal.

The driving current ID can be generated by the first transistor TR1. Inexample embodiments, the first transistor TR1 operates in a saturationregion. In this case, the first transistor TR1 can generate the drivingcurrent ID based on a voltage difference of the gate terminal and thesource terminal, and a gradation can be implemented based on an amountof the driving current ID generated by the first transistor TR1. In someexample embodiments, the first transistor TR1 operates in a linearregion. In this case, a gradation can be implemented based on the amountof time during which the first transistor TR1 provides the drivingcurrent ID to the OLED within one frame.

The second transistor TR2 can include a gate terminal, a first terminal,and a second terminal, and the third transistor TR3 can include a gateterminal, a first terminal, and a second terminal. Here, the secondtransistor TR2 and the third transistor TR3 can be connected in series,and can serve as a dual gate transistor. For example, when the dualtransistor is off (or turned off), leakage current is decreased. Thus,the second terminal of the second transistor TR2 can be connected to thefirst terminal of the third transistor TR3. Each of the gate terminalsof the second and third transistors TR2 and TR3 can receive a scansignal GW. The first terminal of the second transistor TR2 can beconnected to the gate terminal of the first transistor TR1. The secondterminal of the third transistor TR3 can be connected to the secondterminal of the first transistor TR1. In example embodiments, each ofthe first terminals of the second and third transistors TR2 and TR3 is asource terminal, and each of the second terminals of the second andthird transistors TR2 and TR3 is a drain terminal. Alternatively, eachof the first terminals of the second and third transistors TR2 and TR3can be a drain terminal, and each of the second terminals of the secondand third transistors TR2 and TR3 can be a source terminal.

The second transistor TR2 and the third transistor TR3 can connect thegate terminal of the first transistor TR1 to the second terminal of thefirst transistor TR1 while the scan signal GW is activated. In thiscase, the second transistor TR2 and the third transistor TR3 can operatein a linear region. That is, the second transistor TR2 and the thirdtransistor TR3 can form a diode connection of the first transistor TR1while the scan signal GW is activated. A voltage difference between thefirst terminal of the first transistor TR1 and the gate terminal of thefirst transistor TR1, the voltage difference of which amount correspondsto a threshold voltage of the first transistor TR1, can occur due to thediode connection. As a result, a sum voltage of the data signal DATAprovided to the first terminal of the first transistor TR1 and thevoltage difference (i.e., the threshold voltage) can be applied to thegate terminal of the first transistor TR1 while the scan signal GW isactivated. Thus, the data signal DATA can be compensated as much as thethreshold voltage of the first transistor TR1. The compensated datasignal DATA can be applied to the gate terminal of the first transistorTR1. A uniformity of the driving current ID can be improved because ofreducing an affect by the threshold voltage of the first transistor TR1.

A first node N1 is located between the second transistor TR2 and thethird transistor TR3. In addition, a second node N2 is located in anoutput terminal of a second power supply voltage VINT (e.g., aninitialization voltage). For example, an input terminal of aninitialization voltage VINT is connected to a first terminal of thesixth transistor TR6 and a first terminal of the seventh transistor TR7,and the output terminal of an initialization voltage VINT is connectedto a second terminal of the fifth transistor TR5 and a first terminal ofthe storage capacitor CST. In example embodiments, the pixel 10 mayinclude the parasitic capacitor CP1 that includes the first node N1 anda first power supply voltage line ELVDD, and the parasitic capacitor CP2that includes the second node N2 and the first power supply voltage lineELVDD. In this case, although a voltage level of the data signal DATA ischanged, crosstalk that occurs in the first and second nodes N1 and N2that are adjacent to a data signal line can be reduced. Accordingly, asthe pixel 10 includes the first and second parasitic capacitors CP1 andCP2, a voltage fluctuation in the first and second nodes N1 and N2 canbe decreased.

The fourth transistor TR4 can include a gate terminal, a first terminal,and a second terminal. The scan signal GW can be applied to the gateterminal. The first terminal can receive the data signal DATA. Thesecond terminal can be connected to the first terminal of the firsttransistor TR1. In example embodiments, the first terminal of the fourthtransistor TR4 is a source terminal, and the second terminal of thefourth transistor TR4 is a drain terminal. In some example embodiments,the first terminal of the fourth transistor TR4 is a drain terminal, andthe second terminal of the fourth transistor TR4 is a source terminal.

The fourth transistor TR4 can provide the data signal DATA to the firstterminal of the first transistor TR1 while the scan signal GW isactivated. The fourth transistor TR4 can operate in a linear region.

The fifth transistor TR5 can include a gate terminal, a first terminal,and a second terminal, and the sixth transistor TR6 can include a gateterminal, a first terminal, and a second terminal. Here, the fifthtransistor TR5 and the sixth transistor TR6 can be connected in series,and can serve as a dual gate transistor. For example, when the dualtransistor is off (or turned off), leakage current is decreased. Thus,the second terminal of the fifth transistor TR5 can be connected to thefirst terminal of the sixth transistor TR6. Each of the gate terminalsof the fifth and sixth transistors TR5 and TR6 can receive a datainitialization signal GI. The initialization voltage VINT can be appliedto the first terminal of the fifth transistor TR5. The second terminalof the sixth transistor TR6 can be connected to the gate terminal of thefirst transistor TR1. In example embodiments, each of the firstterminals of the fifth and sixth transistors TR5 and TR6 is a sourceterminal, and each of the second terminals of the fifth and sixthtransistors TR5 and TR6 is a drain terminal. Alternatively, each of thefirst terminals of the fifth and sixth transistors TR5 and TR6 can be adrain terminal, and each of the second terminals of the fifth and sixthtransistors TR5 and TR6 can be a source terminal.

The fifth transistor TR5 and the sixth transistor TR6 can apply theinitialization voltage VINT to the gate terminal of the first transistorTR1 while the data initialization signal GI is activated. In this case,the fifth transistor TR5 and the sixth transistor TR6 can operate in thelinear region. Thus, the fifth transistor TR5 and the sixth transistorTR6 can initialize the gate terminal of the first transistor TR1 as theinitialization voltage VINT while the data initialization signal GI isactivated. In example embodiments, a voltage level of the initializationvoltage VINT is sufficiently lower than a voltage level of the datasignal DATA maintained by the storage capacitor CST in a previous frame.The initialization voltage VINT can be applied to the gate terminal ofthe first transistor TR1 that is a P-channel metal oxide semiconductor(PMOS) type transistor. In some example embodiments, a voltage level ofthe initialization voltage VINT is sufficiently higher than the voltagelevel of the data signal DATA maintained by the storage capacitor CST ina previous frame. The initialization voltage VINT can be applied to thegate terminal of the first transistor TR1 that is an N-channel metaloxide semiconductor (NMOS) type transistor.

In example embodiments, the data initialization signal GI is identicalto the scan signal GW advanced by one horizontal time period. Forexample, the data initialization signal GI is applied to pixels locatedin the (n)th row of a plurality of pixels included in a display panel(where n is an integer of 2 or more) is substantially the same as thescan signal GW applied to pixels located in the (n−1)th row of aplurality of the pixels. Thus, the data initialization signal GI that isactivated can be applied to pixels located in the (n)th row by applyingthe scan signal GW that is activated to pixels located in the (n−1)throw. As a result, the gate terminal of the first transistor TR1 includedin pixels located in the (n)th row can be initialized as theinitialization voltage VINT when the data signal DATA is applied topixels located in the (n−1)th row.

The seventh transistor TR7 can include a gate terminal, a firstterminal, and a second terminal. A diode initialization signal (e.g.,the data initialization signal GI) can be applied to the gate terminalof the seventh transistor TR7. The initialization voltage VINT can beapplied to the first terminal of the seventh transistor TR7. The firstterminal of the seventh transistor TR7 can be connected to the firstterminal of the OLED. In example embodiments, the first terminal of theseventh transistor TR7 is a source terminal, and the second terminal ofthe seventh transistor TR7 is a drain terminal. In some exampleembodiments, the first terminal of the seventh transistor TR7 is a drainterminal, and the second terminal of the seventh transistor TR7 is asource terminal.

The seventh transistor TR7 can apply the initialization voltage VINT tothe first terminal of the OLED while the diode initialization signal isactivated. In this case, the seventh transistor TR7 can operate in thelinear region. Thus, the seventh transistor TR7 can initialize the firstterminal of the OLED as the initialization voltage VINT while the diodeinitialization signal is activated.

In example embodiments, the data initialization signal GI and the diodeinitialization signal are the same signal. An initialization operationof the gate terminal of the first transistor TR1 can do not affect aninitialization operation of the first terminal of the OLED. Therefore,the data initialization signal GI is used as the diode initializationsignal, thereby improving the manufacturing efficiency.

The eighth transistor TR8 can include a gate terminal, a first terminal,and a second terminal. The emission signal EM can be applied to the gateterminal of the eighth transistor TR8. The first terminal of the eighthtransistor TR8 can be connected to the second terminal of the firsttransistor TR1. The second terminal can be connected to the firstterminal of the OLED. In example embodiments, the first terminal of theeighth transistor TR8 is a source terminal, and the second terminal ofthe eighth transistor TR8 is a drain terminal. In some exampleembodiments, the first terminal of the eighth transistor TR8 is a drainterminal, and the second terminal of the eighth transistor TR8 is asource terminal.

The eighth transistor TR8 can provide the driving current ID generatedby the first transistor TR1 to the OLED while the emission signal EM isactivated. In this case, the eighth transistor TR8 can operate in thelinear region. Thus, the eighth transistor TR8 can provide the drivingcurrent ID generated by the first transistor TR1 to the OLED while theemission signal EM is activated such that the OLED emits light. Inaddition, the eighth transistor TR8 can disconnect the first transistorTR1 from the OLED while the emission signal EM is inactivated such thatthe compensated data signal DATA applied to the second terminal of thefirst transistor TR1 is applied to the gate terminal of the firsttransistor TR1.

The ninth transistor TR9 can apply the first power voltage ELVDD to thefirst terminal of the first transistor TR1 while the emission signal EMis activated. In some embodiments, the ninth transistor TR9 does notapply the first power voltage ELVDD while the emission signal EM isinactivated. In this case, the ninth transistor TR9 can operate in thelinear region. The ninth transistor TR9 can apply the first powervoltage ELVDD to the first terminal of the first transistor TR1 whilethe emission signal EM is activated such that the first transistor TR1generates the driving current ID. In addition, in some embodiments, theninth transistor TR9 does not apply the first power voltage ELVDD whilethe emission signal EM is inactivated such that the data signal DATAapplied to the first terminal of the first transistor TR1 is applied tothe gate terminal of the first transistor TR1.

The storage capacitor CST can be connected between a first power voltageELVDD line and the gate terminal of the first transistor TR1. Thestorage capacitor CST can maintain a voltage level of the gate terminalof the first transistor TR1 while the scan signal GW is inactivated. Anemission signal EM can be activated while the scan signal GW isinactivated. The driving current ID generated by the first transistorTR1 can be provided to the OLED while the emission signal EM isactivated. Therefore, the driving current ID generated by the firsttransistor TR1 can be provided to the OLED based on the voltage levelmaintained by the storage capacitor CST.

FIGS. 2 through 8 are layout diagrams illustrating an OLED displayincluding the pixel in accordance with example embodiments.

Referring to FIGS. 2 and 3, an OLED display includes a substrate (notillustrated), an active pattern 100, a gate insulation layer (notillustrated), a first gate electrode 105, a second gate electrode 110, athird gate electrode 115, a forth gate electrode 120, etc.

The substrate can be formed of an insulation material, such as a glass,a transparent plastic, a transparent metal oxide, etc. Although it isnot illustrated, one or more buffer layer can be provided on thesubstrate. For example, the buffer layer is formed of silicon oxide,silicon nitride, silicon oxynitride, etc.

The active pattern 100 can be formed on the substrate. The activepattern 100 can be formed of silicon. Alternatively, the active pattern100 can be formed of a semiconductor oxide including a binary compound(ABx), a ternary compound (ABxCy), a quaternary compound (ABxCyDz), etc.which include one or more of indium, zinc, gallium, tin, titanium,aluminum, hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. Thesecompounds can be used alone or in combination thereof.

The active pattern 100 can include first through tenth regions A, B, C,D, E, F, G, H, I, and J. The regions A, B, C, D, E, F, G, H, I, and Jcan be doped with an impurity, and thus can have electrical conductivityhigher than those of other regions of the active pattern 100. Theregions A, B, C, D, E, F, G, H, I, and J can be source terminals ordrain terminals of first through ninth transistors TR1, TR2, TR3, TR4,TR5, TR6, TR7, TR8, and TR9. In some embodiments, boundaries between theregions A, B, C, D, E, F, G, H, I, and J are not discrete, and theregions A, B, C, D, E, F, G, H, I, and J can be electrically connectedto each other. In example embodiments, the active pattern 100 isrepeatedly formed in a first direction that is substantially parallel toan upper surface of the substrate.

The gate insulation layer can be formed on the substrate to cover theactive pattern 100. The gate insulation layer can be formed of a siliconcompound, metal oxide, etc. For example, the gate insulation layer isformed of silicon oxide, silicon nitride, silicon oxynitride, aluminumoxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide,etc., which can be used alone or in combination thereof. In exampleembodiments, the gate insulation layer has a multilayer structureincluding a silicon oxide layer and a silicon nitride layer.

The first gate electrode 105, the second gate electrode 110, the thirdgate electrode 115, and the fourth gate electrode 120 can be formed onthe gate insulation layer. The first gate electrode 105, the second gateelectrode 110, the third gate electrode 115, and the fourth gateelectrode 120 can be formed at the same level. The first gate electrode105, the second gate electrode 110, the third gate electrode 115, and/orthe fourth gate electrode 120 can be formed of a metal, an alloy, metalnitride, conductive metal oxide, transparent conductive materials, etc.For example, the first gate electrode 105, the second gate electrode110, the third gate electrode 115, and/or the fourth gate electrode 120are formed of aluminum (Al), silver (Ag), tungsten (W), copper (Cu),nickel (Ni), chromium (Cr), molybdenum (Mo), titanium (Ti), platinum(Pt), tantalum (Ta), neodymium (Nd), scandium (Sc), and the alloy or aconductive nitride thereof. Alternatively, the first gate electrode 105,the second gate electrode 110, the third gate electrode 115, and/or thefourth gate electrode 120 can be formed of strontium ruthenium oxide(SrRuxOy), zinc oxide (ZnOx), indium tin oxide (ITO), tin oxide (SnOx),indium oxide (InOx), gallium oxide (GaOx), indium zinc oxide (IZO), etc.

The first gate electrode 105 can form or define the first transistor TR1together with the first region A and the second region B. In exampleembodiments, the first region A is a source region, and the secondregion B is a drain region. Alternatively, the first region A can be adrain region, and the second region B can be a source region. The firstregion A and the second region B can be doped with the impurity.However, in some embodiments, a region of the active pattern 100 underthe first gate electrode 105 is not be doped with the impurity. Thus,the first region A and the second region B can operate as conductors,and the region of the active pattern 100 under the first gate electrode105 can operate as a channel of the first transistor TR1. Accordingly,the first transistor TR1 can be capable of generating a driving currentID of FIG. 1 provided to an OLED, and the OLED can emit light based onthe driving current ID.

The second gate electrode 110 can include a second gate extended portionand a second gate protruding portion. Here, the second gate extendedportion can extend in the first direction, and the second gateprotruding portion can protrude from the second gate extended portion ina second direction that is substantially perpendicular to (or crossing)the first direction. The second gate protruding portion can form ordefine the second transistor TR2 together with the third region C andthe fourth region D. For example, the second gate protruding portionserves as a gate electrode of the second transistor TR2. The second gateextended portion can include a first portion and a second portion thatis opposite to the first portion. The first portion of the second gateextended portion can form or define the third transistor TR3 togetherwith the second region B and the fourth region D, and the second portionof the second gate extended portion can form or define the fourthtransistor TR4 together with the first region A and the fifth region E.Here, the second transistor TR2 and the third transistor TR3 can be inseries, and can serve as a dual gate transistor. For example, when thedual transistor is turned-off, leakage current is decreased. Thus, thesecond transistor TR2 and the third transistor TR3 can be electricallyconnected via the fourth region D. In addition, the first transistorTR1, the fourth transistor TR4, and the ninth transistor TR9 can beelectrically connected via the first region A, and the first transistorTR1, the third transistor TR3, and the eighth transistor TR8 can beelectrically connected via the second region B. In example embodiments,the fourth region D is a first node N1 of FIG. 1, and the third region Ccan be a second node N2 of FIG. 1.

The first region A, the second region B, the third region C, the fourthregion D, and the fifth region E can be doped with the impurity.However, in some embodiments, regions of the active pattern 100 underthe second gate electrode 110 are not doped with the impurity. Thus, thefirst region A, the second region B, the third region C, the fourthregion D, and the fifth region E can operate as the conductors, and theregions of the active pattern 100 under the second gate electrode 110can operate as channels of the second transistor TR2, the thirdtransistor TR3, and the fourth transistor TR4. In example embodiments,the second gate electrode 110 receives a scan signal GW illustrated inFIG. 1.

In example embodiments, each of the third region C of the secondtransistor TR2, the fourth region D of the third transistor TR3, and thefifth region E of the fourth transistor TR4 is a source region, and eachof the fourth region D of the second transistor TR2, the second region Bof the third transistor TR3, and the first region A of the fourthtransistor TR4 is a drain region. Alternatively, each of the thirdregion C of the second transistor TR2, the fourth region D of the thirdtransistor TR3, and the fifth region E of the fourth transistor TR4 canbe a drain region, and each of the fourth region D of the secondtransistor TR2, the second region B of the third transistor TR3, and thefirst region A of the fourth transistor TR4 can be a source region.

The third gate electrode 115 can extend in the first direction. Thethird gate electrode 115 can form or define the fifth transistor TR5together with the third region C and the sixth region F, and can form ordefine the sixth transistor TR6 together with the sixth region F and theseventh region G. In addition, the third gate electrode 115 can form ordefine the seventh transistor TR7 together with the seventh region G andthe eighth region H. Here, the fifth transistor TR5 and the sixthtransistor TR6 can be in series, and can serve as a dual gatetransistor. For example, when the dual transistor is turned-off, leakagecurrent is decreased. Thus, the fifth transistor TR5 and the sixthtransistor TR6 can be electrically connected via the sixth region F. Inaddition, the sixth transistor TR6 and the seventh transistor TR7 can beelectrically connected to the seventh region G, and the eighth region Hcan be electrically connected to the ninth region I.

The third region C, the sixth region F, the seventh region G, and theeighth region H can be doped with the impurity. However, in someembodiments, regions of the active pattern 100 under the third gateelectrode 115 are not doped with the impurity. Thus, the third region C,the sixth region F, the seventh region G, and the eighth region H canoperate as the conductors, and the regions of the active pattern 100under the third gate electrode 115 can operate as channels of the fifthtransistor TR5, the sixth transistor TR6, and the seventh transistorTR7. In example embodiments, the third gate electrode 115 receives adata initialization signal GI of FIG. 1, the seventh region G canreceive an initialization voltage VINT illustrated in FIG. 1.

In example embodiments, each of the third region C of the fifthtransistor TR5, the sixth region F of the sixth transistor TR6, and theseventh region G of the seventh transistor TR7 is a source region, andeach of the sixth region F of the fifth transistor TR5, the seventhregion G of the sixth transistor TR6, the eighth region H of the seventhtransistor TR7 is a drain region. Alternatively, the each of the thirdregion C of the fifth transistor TR5, the sixth region F of the sixthtransistor TR6, and the seventh region G of the seventh transistor TR7can be a drain region, and the sixth region F of the fifth transistorTR5, the seventh region G of the sixth transistor TR6, the eighth regionH of the seventh transistor TR7 can be a source region.

The fourth gate electrode 120 can form or define the eighth transistorTR8 together with the second region B and the ninth region I, and canform or define the ninth transistor TR9 together with the first region Aand the tenth region J.

The first region A, the second region B, the ninth region I, and thetenth region J can be doped with the impurity. However, in someembodiments, regions of the active pattern 100 under the fourth gateelectrode 120 are not doped with the impurity. Thus, the first region A,the second region B, the ninth region I, and the tenth region J canoperate as the conductors, and the regions of the active pattern 100under the fourth gate electrode 120 can operate as channels of theeighth transistor TR8 and the ninth transistor TR9. In exampleembodiments, the fourth gate electrode 120 receives an emission signalEM illustrated in FIG. 1.

In example embodiments, each of the ninth region I of the eighthtransistor TR8 and the tenth region J of the first pixel column 10 is asource region, and the each of the second region B of the eighthtransistor TR8 and the first region A of the ninth transistor TR9 is adrain region. Alternatively, each of the ninth region I of the eighthtransistor TR8 and the tenth region J of the first pixel column 10 canbe drain region, and the each of the second region B of the eighthtransistor TR8 and the first region A of the ninth transistor TR9 can besource region.

Referring to FIGS. 4 and 5, an OLED display includes a substrate (notillustrated), an active pattern 100, a gate insulation layer (notillustrated), a first gate electrode 105, a second gate electrode 110, athird gate electrode 115, and a forth electrode 120 as shown in FIGS. 2and 3. The OLED display can further include a first insulatinginterlayer (not illustrated), a first conductive pattern 150, a secondconductive pattern 130, and a second power supply voltage line 140.

The first insulating interlayer can be formed on the gate insulationlayer to cover the first gate electrode 105, the second gate electrode110, the third gate electrode 115, and the fourth gate electrode 120. Inexample embodiments, the first insulating interlayer sufficiently coversthe first gate electrode 105, the second gate electrode 110, the thirdgate electrode 115, and the fourth gate electrode 120, and has asubstantially level surface without a step around the first gateelectrode 105, the second gate electrode 110, the third gate electrode115, and the fourth gate electrode 120. In some example embodiments, thefirst insulating interlayer covers the first gate electrode 105, thesecond gate electrode 110, the third gate electrode 115, and the fourthgate electrode 120, and is formed with a substantially uniform thicknessalong a profile of the first gate electrode 105, the second gateelectrode 110, the third gate electrode 115, and the fourth gateelectrode 120. The first insulating interlayer can be formed of anorganic material, such as a silicon compound, or an inorganic material,such as a transparent insulating resin. For example, the firstinsulating interlayer is formed of silicon oxide, silicon nitride,silicon oxynitride, and etc. These can be used alone or in combinationwith each other.

The first conductive pattern 150, the second conductive pattern 130, andthe second power supply voltage line 140 can be formed on the firstinsulating interlayer. Each of the first conductive pattern 150, thesecond conductive pattern 130, the second power supply voltage line 140can be formed of a metal, an alloy, metal nitride, conductive metaloxide, transparent conductive materials, etc. These can be used alone orin a suitable combination thereof. That is, the first conductive pattern150, the second conductive pattern 130, and the second power supplyvoltage line 140 can be substantially simultaneously or concurrentlyformed using the same materials. The fourth region D can be a first nodeN1 of FIG. 1, and the third region C can be a second node N2 of FIG. 1.

The first conductive pattern 150 can overlap at least a portion thefourth region D (e.g., a first node N1) and at least a portion the thirdregion C (e.g., a second node N1). For example, the first conductivepattern 150 overlaps the fourth region D of a first pixel and the thirdregion C of a second pixel that is adjacent to the first pixel. That is,the first conductive pattern 150 can be interposed between the secondgate electrode 110 and the third gate electrode 115 on the substrate,and can extend in the first direction. In addition, in some embodiments,the first conductive pattern 150 does not overlap the second gateelectrode 110 and/or the third gate electrode 115. Accordingly, thefirst conductive pattern 150 can form or define first and secondparasitic capacitors CP1 and CP2 together with the at least a portionthe fourth region D and the at least a portion the third region C. Inaddition, the first conductive pattern 150 can overlap at least aportion the fifth region E. The first conductive pattern 150 can receivea first power supply voltage ELVDD illustrated in FIG. 1 via a firstpower supply voltage line that will be described below.

The second conductive pattern 130 can overlap the first gate electrode105. Thus, the second conductive pattern 130 can form or define astorage capacitor CST illustrated in FIG. 1 together with the first gateelectrode 105. The second conductive pattern 130 can extend in adirection substantially parallel to an upper surface of the substratefrom an overlapped portion with the first gate electrode 105. As aresult, the second conductive pattern 130 can be formed to partiallyoverlap the first and second regions A and B of the active pattern 100.That is, the conductive pattern 132 can be formed to overlap with thesource node of the active pattern 100. In example embodiments, thesecond conductive pattern 130 receives the first power voltage ELVDDillustrated in FIG. 1. In addition, the second conductive pattern 130can have an opening that exposes at least a portion the first gateelectrode 105. A fourth contact hole of a second connection pattern thatwill be described below can be located in the opening of the first gateelectrode 105, and the first gate electrode 105 can receive theinitialization voltage VINT illustrated in FIG. 1 via the fourth contacthole.

The second power supply voltage line 140 can include a second powersupply extended portion and a second power supply protruding portion.The second power supply extended portion can extend in the firstdirection, and the second power supply protruding portion can beprotruded from the second power supply extended portion in the seconddirection. Here, the second power supply protruding portion can overlapat least a portion the third gate electrode 115. A third contact hole ofa first connection pattern that will be described below can be locatedin the second power supply protruding portion of the second power supplyvoltage line 140. A second contact hole of the first connection patterncan be located in the seventh region G. A second power supply voltagecan be applied to the seventh region G via the second and third contactholes of the first connection pattern.

Referring to FIGS. 6 and 7, an OLED display includes a substrate (notillustrated), an active pattern 100, a gate insulation layer (notillustrated), a first gate electrode 105, a second gate electrode 110, athird gate electrode 115, a forth electrode 120, a first insulatinginterlayer (not illustrated), a first conductive pattern 150, a secondconductive pattern 130 and a second power supply voltage line 140, etc.as shown in FIGS. 2 through 5. The OLED display can further include asecond insulating interlayer (not illustrated), a first power supplyvoltage line 290, a first connection pattern 430, a second connectionpattern 230, a third connection pattern 390, and a data line 190.

The second insulating interlayer can be formed on the first insulatinginterlayer to cover the first conductive pattern 150, the secondconductive pattern 130, and the second power supply voltage line 140. Inexample embodiments, the second insulating interlayer sufficientlycovers the first conductive pattern 150, the second conductive pattern130, and the second power supply voltage line 140, and has asubstantially flat upper surface without a difference of elevationaround the first conductive pattern 150, the second conductive pattern130, and the second power supply voltage line 140. Alternatively, thesecond insulating interlayer can cover the first conductive pattern 150,the second conductive pattern 130, and the second power supply voltageline 140, and can be formed with a substantially uniform thickness alonga profile of the first conductive pattern 150, the second conductivepattern 130, and the second power supply voltage line 140. The secondinsulating interlayer can be formed of an organic material, such as asilicon compound, or an inorganic material, such as a transparentinsulating resin. For example, the first insulating interlayer is formedof silicon oxide, silicon nitride, silicon oxynitride, and etc. Thesecan be used alone or in combination with each other.

The first power supply voltage line 290, the first connection pattern430, the second connection pattern 230, the third connection pattern 390and the data line 190 can be formed on the second insulating interlayer.The first power supply voltage line 290, the first connection pattern430, the third connection pattern 390, and the data line 190 can beformed of a metal, an alloy, metal nitride, conductive metal oxide,transparent conductive materials, etc. These can be used alone or incombination with each other.

The data line 190 can be electrically connected to the fifth region E ofthe active pattern 100. For example, the data line 190 fills a fourthcontact hole 210, and is connected to the fifth region E via the firstcontact hole 210. In example embodiments, the data line 190 receives adata signal DATA illustrated of FIG. 1. As a result, the data line 190can provide the data signal DATA to the fifth region E via the firstcontact hole 210. Here, a voltage level of the data signals DATA can bechanged according to the change of a gradation.

The first connection pattern 430 can partially overlap the seventhregion G and the second power supply protruding portion on the secondinsulating interlayer. For example, a second contact hole 450 of thefirst connection pattern 430 is located on the seventh region G, and athird contact hole 470 of the first connection pattern 430 is located onthe second power supply protruding portion. The first connection pattern430 can contact each of the seventh region G and the second power supplyprotruding portion via the second contact hole 450 and the third contacthole 470, respectively. The seventh region G and the second power supplyprotruding portion can be electrically connected via the firstconnection pattern 430.

In example embodiments, the second power supply voltage line 140receives the initialization voltage VINT. As a result, the second powersupply voltage line 140 can provide the initialization voltage VINT tothe seventh region G via the first connection pattern 430.

The second connection pattern 230 can extend in the second direction onthe second insulating interlayer, and can be electrically connected toat least a portion the third region C of the active pattern 100 and atleast a portion the first gate electrode 105. For example, the secondconnection pattern 230 contacts the at least a portion the third regionC (e.g., a second node N2) via a fifth contact hole 270, and contactsthe at least a portion the first gate electrode 105 via a fourth contacthole 250 that is located in the opening of the second conductive pattern130. That is, the second connection pattern 230 can be electricallyconnected to the third region C and the first gate electrode 105 via thefourth contact hole 250 and the fifth contact hole 270. In exampleembodiments, the second connection pattern 230 receives theinitialization voltage VINT provided through the fifth transistor TR5and the sixth transistor TR6. As a result, the second connection pattern230 can provide the initialization voltage VINT to the first gateelectrode 105 via the fourth contact hole 250 and the fifth contact hole270.

The first power supply voltage line 290 can extend in the seconddirection on the second insulating interlayer. The first power supplyvoltage line 290 can be in contact with the tenth region J of the activepattern 100 via a sixth contact hole 355, can be in contact with thesecond conductive pattern 130 via a seventh contact hole 360. Inaddition, the first power supply voltage line 290 can be in contact withthe first conductive pattern 150 via an eighth contact hole 370. Thatis, the first power supply voltage line 290 can be electricallyconnected to each of the tenth region J, the second conductive pattern130, and the first conductive pattern 150 via the sixth contact hole355, the seventh contact hole 360, and the eighth contact hole 370,respectively. The first power supply voltage line 290 can provide thefirst power supply voltage ELVDD to the tenth region J, the secondconductive pattern 130, and the first conductive pattern 150.

The third connection pattern 390 can be in contact with the ninth regionI of the active pattern 100 via a ninth contact hole 410. The thirdconnection pattern 390 can be in contact with a first electrode thatwill be described below, and a driving current can be applied to thefirst electrode.

When the first conductive pattern 150 is not formed, crosstalk can occurin the third and fourth regions C and D that are adjacent to a datasignal line 190 according to the change of voltage level of the datasignals DATA. Accordingly, the stain can be displayed in the OLEDdisplay.

In example embodiments, the first conductive pattern 150 that receivesthe first power supply voltage ELVDD overlaps at least a portion of thethird and fourth regions C and D. The first conductive pattern 150 canform or define first and second parasitic capacitors CP1 and CP2together with the at least a portion of the fourth region D and the atleast a portion the third region C. That is, the first conductivepattern 150 can be interposed between the data line 190 and the thirdand fourth regions C and D of the active pattern 100 such that the firstconductive pattern 150 shields (or electrically disconnects) a parasiticcapacitor between the data line 190 and the third and fourth regions Cand D of the active pattern 100. As the first conductive pattern 150receiving the first power supply voltage ELVDD that a voltage level isnot changed is formed even though a voltage level of the data signalDATA is changed, the crosstalk can be reduced. Accordingly, the stain isnot displayed in the OLED display and a definition of the OLED displaycan be improved. In addition, when the second conductive pattern 130 andthe first conductive pattern 150 are integrally formed, the conductivepattern that is integrally formed can overlap the second gate electrode.Thus, the conductive pattern can be shorted to the second gate electrode110. In example embodiments, the second conductive pattern 130 is spacedapart from the first conductive pattern 150, and the second conductivepattern 130 the first conductive pattern 150 do not overlap with thesecond gate electrode 110. Accordingly, the short between the secondgate electrode 110 and the conductive patterns can be prevented.

In example embodiments, the OLED display further includes a thirdinsulating interlayer (not illustrated), a first electrode (notillustrated), a pixel defining layer (not illustrated), an organic lightemitting layer (not illustrated), and a second electrode (notillustrated).

The third insulating interlayer can be formed on the second insulatinginterlayer to cover the first power supply voltage line 290, the firstconnection pattern 430, the second connection pattern 230, the thirdconnection pattern 390, and the data line 190. In example embodiments,the third insulating interlayer sufficiently covers the first powersupply voltage line 290, the first connection pattern 430, the secondconnection pattern 230, the third connection pattern 390, and has asubstantially flat upper surface without a difference of elevationaround the first power supply voltage line 290, the first connectionpattern 430, the second connection pattern 230, the third connectionpattern 390, and the data line 190. The third insulating interlayer canbe formed of an organic material, such as a silicon compound, or aninorganic material, such as a transparent insulating resin. For example,the third insulating interlayer is formed of silicon oxide, siliconnitride, silicon oxynitride, etc. These can be used alone or incombination with each other.

The first electrode can be formed on the third insulating interlayer.For example, the first electrode can be formed on a portion of the thirdinsulating interlayer. The first electrode can be formed of metal,alloy, metal nitride, conductive metal oxide, and transparent conductivematerial. These can be used alone or in combination with each other.

The first electrode can be formed on a portion of the third insulatinginterlayer. The first electrode can be formed of a metal, an alloy,metal nitride, conductive metal oxide, transparent conductive materials,etc. The first electrode can be electrically connected to the ninthregion I. For example, the first electrode is connected to the ninthregion I via the ninth contact hole 410. As a result, the firstelectrode can receive the driving current ID illustrated in FIG. 1 viathe ninth contact hole 410. In example embodiments, the first electrodeis an anode electrode. Alternatively, the first electrode can be acathode electrode.

The pixel defining layer can be formed on the third insulatinginterlayer. For example, the pixel defining layer is formed on the thirdinsulating interlayer and a portion of the first electrode. An openingof the pixel defining layer can be located at a portion of the firstelectrode on the third insulating interlayer, and the organic lightemitting layer can be formed in the opening. The organic light emittinglayer can be formed on the first electrode. In particular, the organiclight emitting layer can be formed on the first electrode exposed viathe opening of the pixel defining layer. The organic light emittinglayer can include a light emitting material that is capable of emittinglight. The light emitting material can include organic materials. Inexample embodiments, the light emitting material is formed of organicmaterials corresponding to wavelengths of red light, green light, and/orblue light.

The second electrode can be formed on the pixel defining layer and theorganic light emitting layer. In example embodiments, the secondelectrode is formed of a transparent conductive material. For example,the second electrode is formed of indium tin oxide, indium zinc oxide,zinc oxide, tin oxide, gallium oxide, indium oxide, etc. In exampleembodiments, the second electrode is a cathode electrode. The firstelectrode, the organic light emitting layer, and the second electrodecan form or define the OLED illustrated of FIG. 1. Alternatively, thesecond electrode can be an anode electrode. In example embodiments, thesecond electrode receives the third power voltage ELVSS illustrated ofFIG. 1.

As a result, the OLED display of FIGS. 2 to 8 includes the pixel of FIG.1 capable of improving a definition of the organic light emitting diode.As described above, since the first conductive pattern 150 is interposedbetween the data line 190 and the active pattern 100, the crosstalkcapable of being generated in the third and fourth regions C and D canbe reduced by shielding the active pattern 100 from the data line 190.

FIG. 9 is a cross-sectional view taken along a line I-I′ of FIG. 7.Referring to FIG. 9, the OLED display includes a substrate 50, an activepattern 100, a gate insulation layer 102, a first insulating interlayer131, a first conductive pattern 150, a second insulating interlayer 133,a data line 190, a first power supply voltage line 290, a thirdinsulating interlayer 195, a first electrode (or first light-emittingelectrode) 310, a pixel defining layer (not illustrated), an organiclight emitting layer 330, a second electrode (or second light-emittingelectrode) 350, etc.

The active pattern 100 can be formed on the substrate 50. The substrate50 can be formed of a transparent insulating material such as a glass, atransparent plastic, and a transparent ceramic. The active pattern 100can include a third region C, a fourth region D, and a fifth region E.The third region C can be a second node N2, and the fourth region D canbe a first node N1.

As described above, the gate insulation layer 102 can be formed to coverthe active pattern 100. The gate electrodes can be formed on the gateinsulation layer 102.

After the second gate electrode is formed, the active pattern 100 can bedoped with the impurity. In some embodiments, the third region C, thefourth region D, and the fifth region E can be doped, regions under thegate electrodes are not doped with the impurity. As a result, the thirdregion C, the fourth region D, and the fifth region E can operate asconductors, the regions under the gate electrodes can operate as achannel of the second transistor.

The first insulation interlayer 131 can be formed to cover the gateelectrodes on the gate insulation layer 102. The first conductivepattern 150 can be formed on the first insulating interlayer 131. Thefirst conductive pattern 150 can overlap at least a portion the thirdregion C and at least a portion the fourth region D. Each of theoverlapped portions 510 and 530 can be parasitic capacitors CP1 and CP2,respectively.

The second insulating interlayer 133 can be formed to cover the firstconductive pattern 150. The data line 190 and the first power supplyvoltage line 290 can be formed on the second insulating interlayer 133.The first power supply voltage line 290 can be in contact with the firstconductive pattern 150 via an eighth contact hole 370. The first powersupply voltage line 290 can provide the first power supply voltage ELVDDto the first conductive pattern 150. Thus, the first conductive pattern150 receiving the first power supply voltage ELVDD can have a voltagelevel that is not changed and shield the third and fourth regions C andD from the data line 190 even though a voltage level of the data signalDATA is changed.

The third insulating interlayer 195 can be formed to cover the data line190 and the first power supply voltage line 290 on the second insulatinginterlayer 133. The third insulating interlayer 195 can be formed with athickness to sufficiently cover the data line 190 and the first powersupply voltage line 290. In this case, the third insulating interlayer195 can have a substantially flat upper surface, and a planarizationprocess can be further performed on the third insulating interlayer 195to implement the flat upper surface of the third insulating interlayer195.

The first electrode 310 can be formed on the third insulating interlayer195. The first electrode 310 can be formed in a portion of the thirdinsulating interlayer 195. For example, the first electrode 310 iselectrically connected to the ninth region I via a ninth contact hole(not illustrated). The organic light emitting layer 330 can be formed onthe first electrode 310. Finally, the second electrode 350 can be formedon the organic light emitting layer 330.

FIG. 10 is a cross-sectional view taken along a line II-II of FIG. 8.

Referring to FIG. 10, the OLED display includes a substrate 50, a gateinsulation layer 102, a first gate electrode 105, a second gateelectrode 110, a first insulating interlayer 131, a second conductivepattern 130, a first conductive pattern 150, a second insulatinginterlayer 133, a first power supply voltage line 290, a thirdinsulating interlayer 195, a first electrode, a pixel defining layer(not illustrate), an organic light emitting layer 330, a secondelectrode, etc.

The substrate 50, the gate insulation layer 102, the first conductivepattern 150, the second insulating interlayer 133, and the first powersupply voltage line 290, the third insulating interlayer 195, the firstelectrode, the pixel defining layer (not illustrate), the organic lightemitting layer 330, the second electrode can be substantially the sameas or similar to configurations described above with reference to FIG.9.

The first gate electrode 105 and the second gate electrode 110 can beformed on the gate insulation layer 102. The first gate electrode 105can be spaced apart from the second gate electrode 110. The firstinsulating interlayer 131 can be formed on the first gate electrode 105and the second gate electrode 110. The second conductive pattern 130 andthe first conductive pattern 150 can be formed on the first insulatinginterlayer 131. The second conductive pattern 130 can be spaced apartfrom the first conductive pattern 150. The second conductive pattern 130can be formed on a portion under which the first gate electrode 105 islocated. Here, as the second conductive pattern 130 overlaps the firstgate electrode 105, the overlapped portion can be a storage capacitorCST.

In addition, in some embodiments, the second conductive pattern 130 andthe first conductive pattern 150 do not overlap the second gateelectrode 110. The second insulating interlayer 133 can be formed on thesecond conductive pattern 130 and the first conductive pattern 150. Thefirst power supply voltage line 290 can be formed on the secondinsulating interlayer 133. The first power supply voltage line 290 canprovide a first power supply voltage ELVDD to each of the secondconductive pattern 130 and the 150 via a the seventh contact hole and aneighth contact hole 370, respectively. As the second conductive pattern130 is spaced apart from the first conductive pattern 150, the secondconductive pattern 130 and the first conductive pattern 150 do notoverlap the second gate electrode 110. Accordingly, the short betweenthe second gate electrode 110 and the conductive patterns can beprevented.

FIGS. 11 through 14 are layout diagrams illustrating an OLED displayincluding the pixel in accordance with some example embodiments.

An OLED display illustrated in FIGS. 11 through 14 can have aconfiguration substantially the same as or similar to that of an OLEDdisplay described with reference to FIGS. 2 through 8 except the shapeof an active pattern 105 and the shape of a first conductive pattern. InFIGS. 11 through 14, detailed descriptions for elements, which aresubstantially the same as or similar to the elements described withreference to FIGS. 2 through 8, are omitted.

An active pattern 105 can be formed on the substrate. Compared to anactive pattern illustrated in FIG. 2, a third region C of the activepattern 105 can be extended in a second direction farther. That is, afirst conductive pattern 145 can be interposed between a second gateelectrode 110 and a third gate electrode 115. In some embodiments, thefirst conductive pattern 145 does not overlap the second gate electrode110 and the third gate electrode 115, and overlaps at least a portionthe third region C and at least a portion a fourth region D. A firstportion 570 can be a portion where the first conductive pattern 145overlaps the at least a portion the third region C, and a second portion550 can be a portion where the first conductive pattern 145 overlaps theat least a portion the fourth region D.

A first connection pattern 430 can partially overlap the seventh regionG and a portion of the first conductive pattern 145 on the secondinsulating interlayer. For example, a second contact hole 450 is locatedon the portion of the first conductive pattern 145, and a third contacthole 470 of the first connection pattern 430 can be located on theseventh region G. The first connection pattern 430 can be in contactwith a portion of the first conductive pattern 145 and the seventhregion G via the second contact hole 450 and the third contact hole 470.The portion of the first conductive pattern 145 and the seventh region Gcan be electrically connected via the first connection pattern 430. Inexample embodiments, the first conductive pattern 145 receives aninitialization voltage VINT. As a result, the first conductive pattern145 can provide the initialization voltage VINT to the seventh region Gvia the first connection pattern 430.

A first power supply voltage line 290 can extend in the second directionon the second insulating interlayer. The first power supply voltage line290 can be in contact with the tenth region J of the active pattern 105via a sixth contact hole 355, can be in contact with a second conductivepattern 130 via a seventh contact hole 360. That is, the first powersupply voltage line 290 can be electrically connected to each of thetenth region J and the second conductive pattern 130 via the sixthcontact hole 355 and the seventh contact hole 360, respectively. Thefirst power supply voltage line 290 can provide the first power supplyvoltage ELVDD to the tenth region J and the second conductive pattern130.

The first conductive pattern 145 can form or define first and secondparasitic capacitors CP1 and CP2 together with at least a portion of thethird and fourth regions C and D. That is, the first conductive pattern145 can be interposed between the data line 190 and the third and fourthregions C and D of the active pattern 105 such that the first conductivepattern 145 shields a parasitic capacitor between the data line 190 andthe third and fourth regions C and D of the active pattern 100. As thefirst conductive pattern 145 receiving the first power supply voltageELVDD has a voltage level that does not change even though a voltagelevel of the data signal DATA is changed, the crosstalk can be reduced.Accordingly, in some embodiments, the stain is not displayed in the OLEDdisplay and a definition of the OLED display can be improved. Inaddition, as the second conductive pattern 130 is spaced apart from thefirst conductive pattern 145, the second conductive pattern 130 and thefirst conductive pattern 145 do not overlap the second gate electrode110. Accordingly, the short between the second gate electrode 110 andthe conductive patterns can be prevented.

The described technology can be applied to various display devicesincluding an OLED display. For example, the described technology isapplied to mobile phones, smartphones, smart pads, laptop computers,tablet computers, personal digital assistants (PDAs), portablemultimedia players (PMPs), digital cameras, music players (e.g., MP3players), portable game consoles, navigation systems, portablecommunication devices, and display device for vehicles, ships, andaircrafts. The described technology can be applied in display devicesfor display or for information transfer, displays for medical devices,etc.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concept. Accordingly, all such modifications areintended to be included within the scope of the present inventiveconcept as defined in the claims. Therefore, it is to be understood thatthe foregoing is illustrative of various example embodiments and is notto be construed as limited to the specific example embodimentsdisclosed, and that modifications to the disclosed example embodiments,as well as other example embodiments, are intended to be included withinthe scope of the appended claims.

What is claimed is:
 1. An organic light-emitting diode (OLED) display,comprising: a substrate; an active pattern formed over the substrate andincluding a first region, a second region, a third region, and a fourthregion; a gate insulation layer formed over the active pattern and thesubstrate; a first gate electrode formed over the gate insulation layerand partially overlapping the active pattern, wherein the first gateelectrode, the first region and the second region define a firsttransistor; a second gate electrode formed on the same layer as thefirst gate electrode, wherein the second gate electrode, the thirdregion and the fourth region define a second transistor, and wherein thesecond gate electrode, the second region and the fourth region define athird transistor; a first insulating interlayer formed over the firstgate electrode, the second gate electrode, and the gate insulationlayer; a first conductive pattern formed over the first insulatinginterlayer and overlapping at least a portion of the third and fourthregions, wherein the first conductive pattern and the overlappingportions of the third and fourth regions define a parasitic capacitor; afirst power supply voltage line formed over the first conductive patternand configured to receive a first power supply voltage; a firstlight-emitting electrode formed over the first power supply voltage lineand electrically connected to the first to third transistors; an organiclight-emitting layer formed over the first light-emitting electrode; anda second light-emitting electrode formed over the organic light-emittinglayer.
 2. The OLED display of claim 1, wherein the second gate electrodeincludes: a second gate extended portion extending in a first directionthat is parallel to an upper surface of the substrate; and a second gateprotruding portion protruding from the second gate extended portion in asecond direction crossing the first direction.
 3. The OLED display ofclaim 2, wherein the second gate extended portion includes a firstportion formed on a first side of the second gate extended portion,wherein the first portion of the second gate extended portion includes agate electrode of the third transistor, and wherein the second gateprotruding portion includes a gate electrode of the second transistor.4. The OLED display of claim 3, wherein the active pattern furtherincludes a fifth region, wherein the second gate electrode, the firstregion and the fifth region define a fourth transistor, wherein thesecond gate extended portion includes a second portion formed on asecond side opposing the first side of the second gate extended portion,and wherein the second portion of the second gate extended portionincludes a gate electrode of the fourth transistor.
 5. The OLED displayof claim 4, further comprising: a data line formed on the same layer asthe first power supply voltage line, wherein the data line is configuredto receive a data signal and provide the data signal to the fifth regionvia a first contact hole, wherein the first conductive pattern isinterposed between the data line and the third and fourth regions of theactive pattern such that the parasitic capacitor is electricallydisconnected from the data line.
 6. The OLED display of claim 1, furthercomprising: a second conductive pattern formed on the same layer as thefirst conductive pattern and partially overlapping the first gateelectrode and the first and second regions of the active pattern,wherein the second conductive pattern has an opening that exposes atleast a portion of the first gate electrode, and wherein the secondconductive pattern and the first gate electrode define a storagecapacitor.
 7. The OLED display of claim 6, wherein the first and secondconductive patterns do not overlap the second gate electrode.
 8. TheOLED display of claim 6, wherein the first and second conductivepatterns are formed of the same material.
 9. The OLED display of claim6, wherein the active pattern further includes a sixth region, a seventhregion, an eighth region, a ninth region, and a tenth region.
 10. TheOLED display of claim 9, further comprising: a third gate electrodeformed over the gate insulation layer, wherein the third gate electrode,the third region and the sixth region define a fifth transistor, whereinthe third gate electrode, the sixth region and the seventh region definea sixth transistor, and wherein the third gate electrode, the seventhregion and the eighth region define a seventh transistor; and a fourthgate electrode formed on the same layer as the third gate electrode,wherein the fourth gate electrode, the second region and the ninthregion define an eighth transistor, and wherein the fourth gateelectrode, the first region and the tenth region define a ninthtransistor.
 11. The OLED display of claim 10, further comprising: asecond power supply voltage line formed on the same layer as the firstand second conductive patterns, wherein the second power supply voltageline is configured to receive a second power supply voltage.
 12. TheOLED display of claim 11, wherein the second power supply voltage lineincludes: a second power supply extended portion extending in a firstdirection that is parallel to an upper surface of the substrate; and asecond power supply protruding portion protruding from the second powersupply extended portion in a second direction crossing the firstdirection.
 13. The OLED display of claim 12, wherein the second powersupply protruding portion overlaps a portion of the third gateelectrode.
 14. The OLED display of claim 13, further comprising: a firstconnection pattern electrically connected to the second power supplyprotruding portion and the seventh region via a second contact hole anda third contact hole, respectively; and a second connection patternelectrically connected to the third region and the first gate electrodevia a fourth contact hole and a fifth contact hole, respectively. 15.The OLED display of claim 14, wherein the first power supply voltageline is configured to i) provide the first power supply voltage to thetenth region via a six contact hole and ii) provide the first powersupply voltage to the second conductive pattern via a seventh contacthole, and wherein the first power supply voltage line is configured toprovide the first power supply voltage to the first conductive patternvia an eighth contact hole.
 16. The OLED display of claim 9, furthercomprising a third connection pattern electrically connected to theninth region and the first electrode via a ninth contact hole.
 17. TheOLED display of claim 16, further comprising: a second insulatinginterlayer formed over the first conductive pattern and the firstinsulating interlayer; and a third insulating interlayer formed over thefirst power supply voltage line and the second insulating interlayer.18. The OLED display of claim 10, wherein the second gate electrode isconfigured to receive a scan signal, wherein the third gate electrode isconfigured to receive an initialization signal, and wherein the fourthgate electrode is configured to receive a light emitting signal.
 19. TheOLED display of claim 9, further comprising: a first connection patternelectrically connected to the first conductive pattern and the seventhregion via a second contact hole and a third contact hole, respectively,wherein the first conductive pattern is configured to receive a secondpower supply voltage.
 20. The OLED display of claim 19, wherein thefirst power supply voltage line is configured to i) provide the firstpower supply voltage to the tenth region via a sixth contact hole andii) provide the first power supply voltage to the second conductivepattern via a seventh contact hole.